STUDY OF DEFECTS IN WIDE-BAND GAP SEMICONDUCTORS BY ELECTRON-PARAMAGNETIC-RESONANCE

被引：34
|
作者：
FANCIULLI, M [1 ]
MOUSTAKAS, TD [1 ]
机构：
[1] BOSTON UNIV,DEPT ELECT ENGN,BOSTON,MA 02215
来源：
PHYSICA B | 1993年 / 185卷 / 1-4期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/0921-4526(93)90242-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Defects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3-5 Gauss and spin-lattice relaxation time, at 293 K, of 10(-6) S. In boron nitride films, depending on growth conditions, the g value varies from 2.0024 to 2.0032, the peak-to-peak linewidth varies from 31 to 7 Gauss and the spin-lattice relaxation time at 293 K varies from 10(-5) to 10(-6) s. An EPR signal has not been observed in GaN films at temperatures above 100 K.
引用
收藏
页码：228 / 233
页数：6
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