CHARACTERIZATION OF THIN-FILM N-CDS/P-CDTE HETEROJUNCTIONS

被引：7
|
作者：
HUSSAIN, OM
REDDY, PJ
机构：
[1] Department of Physics, University of Sri Venkateswara, Tirupati
来源：
VACUUM | 1991年 / 42卷 / 10-11期
关键词：
D O I：
10.1016/0042-207X(91)91492-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
p-Cadmium telluride films were prepared by the laser assisted vacuum evaporation technique, using oxygen as the dopant. The films formed at T(s) approximately 593 K and an oxygen partial pressure of about 1 x 10(-5) torr showed low resistivity (2 x 10(2) OMEGA cm) and high carrier concentration (2-3 x 10(16) cm-3). A typical graphite /p-CdTe/n-CdS/In heterojunction was fabricated and its dark and illuminated current-voltage characteristics were studied. A maximum efficiency of 7.3% was observed for a 1 cm2 area cell. The stability of the cell was also studied for a period of about 8 months.
引用
收藏
页码：657 / 659
页数：3
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