MAGNETIC FIELD EFFECT ON CURRENT DISTRIBUTION IN P-N JUNCTIONS

被引：8

|

作者：

GARFINKE.M

ENGELER, WE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 06期

关键词：

D O I：

10.1063/1.1714370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1877 / &

相关论文

共 50 条

[41] EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS
IMAI, T
UCHIDA, M
SATO, H
KOBAYASHI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (02) : 102 - +
[42] UNIAXIAL STRESS EFFECT OF GE P-N JUNCTIONS
MATUKURA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (04) : 309 - &
[43] EFFECT OF STRESS ON GERMANIUM AND SILICON P-N JUNCTIONS
KANDA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 475 - &
[44] CAPACITANCE OF P-N JUNCTIONS
CHNAG, JF
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 281 - &
[45] ON DISTRIBUTION OF IMPURITIES IN HEAVILY DOPED GERMANIUM P-N JUNCTIONS
BELOVA, NA
ZILBERMA.PE
LYUBCHEN.VE
[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1966, 11 (06): : 965 - &
[46] Model for large magnetoresistance effect in p-n junctions
Cao, Yang
Yang, Dezheng
Si, Mingsu
Shi, Huigang
Xue, Desheng
[J]. APPLIED PHYSICS EXPRESS, 2018, 11 (06)
[47] EFFECT OF UNIFORM STRESS ON SI P-N JUNCTIONS
WOOTEN, FT
BROOKS, AD
WORTMAN, JJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (07): : 1221 - &
[48] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[49] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN ZINC SULFIDE
GEORGOBI.AN
STEBLIN, VI
[J]. RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 924 - &
[50] MODIFIED THEORY OF CURRENT/VOLTAGE RELATION IN SILICON P-N JUNCTIONS
FAULKNER, EA
BUCKINGHAM, MJ
[J]. ELECTRONICS LETTERS, 1968, 4 (17) : 359 - +

← 1 2 3 4 5 →