BAND MODEL OF ANTIFERROMAGNETISM

被引:4
|
作者
CALLAWAY, J [1 ]
KANHERE, DG [1 ]
机构
[1] UNIV POONA,DEPT PHYS,POONA 411007,MAHARASHTRA,INDIA
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 18期
关键词
D O I
10.1103/PhysRevB.49.12823
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We wish to describe antiferromagnetic insulators at T=0 using a one-electron approach. To do this, we propose to overcome the inadequacies of standard local-spin-density theory by adding a spin-dependent magnetic pseudopotential to the Kohn-Sham equations. We then investigate in a general way using a simple two-dimensional model the physical behavior to be expected as band occupancy and interaction strength are varied. We find three phases: nonmagnetic metal, antiferromagnetic metal, and antiferromagnetic insulator. We emphasize the transition between large and small Fermi surfaces which occurs as the band occupancy changes.
引用
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页码:12823 / 12830
页数:8
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