UNIFIED MODEL FOR DRIFT VELOCITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS AS A FUNCTION OF TEMPERATURE AND ELECTRIC-FIELD (VOL 35, PG 1391, 1992)

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MOHAMMAD, SN

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SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

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TM [电工技术]; TN [电子技术、通信技术];

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[1] UNIFIED MODEL FOR DRIFT VELOCITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS AS A FUNCTION OF TEMPERATURE AND ELECTRIC-FIELD
MOHAMMAD, SN
[J]. SOLID-STATE ELECTRONICS, 1992, 35 (10) : 1391 - 1396
[2] TEMPERATURE, ELECTRIC-FIELD, AND DOPING DEPENDENT MOBILITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS
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[J]. SOLID-STATE ELECTRONICS, 1993, 36 (12) : 1677 - 1683
[3] COHERENT ELECTRIC-FIELD EFFECTS IN SEMICONDUCTORS (VOL 73, PG 902, 1994)
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[J]. MODERN PHYSICS LETTERS A, 1992, 7 (40) : 3801 - 3801
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[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (08)