TEMPERATURE, ELECTRIC-FIELD, AND DOPING DEPENDENT MOBILITIES OF ELECTRONS AND HOLES IN SEMICONDUCTORS

被引：19
|
作者：
MOHAMMAD, SN
BEMIS, AV
CARTER, RL
RENBECK, RB
机构：
[1] SUNY COLL NEW PALTZ,DEPT ELECT ENGN,NEW PALTZ,NY 12561
[2] IBM CORP,E FISHKILL FACIL,DIV GEN TECHNOL,HOPEWELL JCT,NY 12533
[3] UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
来源：
SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 12期
关键词：
D O I：
10.1016/0038-1101(93)90213-A
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new formula for electron and hole mobilities in semiconductors is presented. Although empirical, it is accurate and widely applicable to a number of semiconductors, such as Si, Ge, GaAs, InP. etc. The formula is simple, and yet predicts temperature and field dependence of electron and hole mobilities very well. To our knowledge, the present model is more general than any other model (both empirical and theoretical) available in the literature. Because of very simplistic nature, it promises to be highly useful for analytically modeling the current-voltage characteristics of transistors.
引用
收藏
页码：1677 / 1683
页数：7
相关论文
共 50 条
12345