SYNCHROTRON X-RADIATION PLANE-WAVE TOPOGRAPHY FOR IMAGING MICRODEFECTS IN THINNED SILICON-CRYSTALS

被引：9
|
作者：
CHIKAURA, Y [1 ]
IMAI, M [1 ]
SUZUKI, Y [1 ]
YATSURUGI, Y [1 ]
机构：
[1] KOMATSU ELECT MET CO LTD,DIV RES & DEV,SHINMIYA,KANAGAWA 254,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)90182-K
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Synchrotron X-radiation plane-wave topography for thinned silicon crystals is shown to be effective and sensitive for imaging minute strains around microdefects. Visibility of microdefects in crystals thinned down to a thickness (about 100 μm) smaller than several times the extinction distance is compared with that in crystals as thick (0.6 mm for Mo Kα1) as μ-1 (μ: linear absorption coefficient). Various kinds of microdefects reveal themselves much more in the thinned crystals. Observed microdefects are classified into five morphological categories. One of the observed microdefects has an image extinction rule suggesting a specified strain field around it. The morphology of microdefects is described in detail. © 1990.
引用
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页码：141 / 149
页数：9
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