PROBING HOT-CARRIER TRANSPORT AND ELASTIC-SCATTERING USING BALLISTIC-ELECTRON-EMISSION MICROSCOPY

被引：48
|
作者：
MILLIKEN, AM
MANION, SJ
KAISER, WJ
BELL, LD
HECHT, MH
机构：
[1] Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
PHYSICAL REVIEW B | 1992年 / 46卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.46.12826
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.
引用
收藏
页码：12826 / 12829
页数：4
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