EVIDENCE FOR ROOM-TEMPERATURE TUNNELING RECOMBINATION IN AMORPHOUS-SILICON

被引：4
|
作者：
DERSCH, H
AMER, NM
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷
关键词：
D O I：
10.1016/0022-3093(85)90733-1
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：615 / 618
页数：4
相关论文
共 50 条
  • [31] NON-GEMINATE RECOMBINATION IN AMORPHOUS-SILICON
    BOULITROP, F
    DUNSTAN, DJ
    SOLID STATE COMMUNICATIONS, 1982, 44 (06) : 841 - 844
  • [32] DOMINANT RECOMBINATION PROCESS IN AMORPHOUS-SILICON ALLOYS
    GUHA, S
    HACK, M
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) : 1683 - 1685
  • [33] Evidence for room-temperature in-diffusion of nickel into silicon
    Yarykin, Nikolai
    Weber, Joerg
    APPLIED PHYSICS LETTERS, 2016, 109 (10) : 83 - 85
  • [34] POSSIBLE EVIDENCE OF SINGLE ELECTRON-TUNNELING WITH THE SCANNING TUNNELING MICROSCOPE AT ROOM-TEMPERATURE
    VALDES, J
    CHOLEVA, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01): : 598 - 602
  • [35] Room-temperature electroluminescence of erbium-doped amorphous hydrogenated silicon
    Gusev, OB
    Kuznetsov, AN
    Terukov, EI
    Bresler, MS
    Kudoyarova, VK
    Yassievich, IN
    Zakharchenya, BP
    Fuhs, W
    APPLIED PHYSICS LETTERS, 1997, 70 (02) : 240 - 242
  • [36] THE FORMATION OF A CONTINUOUS AMORPHOUS LAYER BY ROOM-TEMPERATURE IMPLANTATION OF BORON INTO SILICON
    JONES, KS
    SADANA, DK
    PRUSSIN, S
    WASHBURN, J
    WEBER, ER
    HAMILTON, WJ
    JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) : 1414 - 1418
  • [37] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, E.I.
    Kudoyarova, V.Kh.
    Kuznetsov, A.N.
    Fuhs, W.
    Weiser, G.
    Kuehne, H.
    Journal of Non-Crystalline Solids, 227-230 (Pt A): : 488 - 492
  • [38] Room-temperature photoluminescence of erbium-doped amorphous hydrogenated silicon
    Bresler, MS
    Gusev, OB
    Kudoyarova, VK
    Kuznetsov, AN
    Pak, PE
    Terukov, EI
    Yassievich, IN
    Zakharchenya, BP
    TENTH FEOFILOV SYMPOSIUM ON SPECTROSCOPY OF CRYSTALS ACTIVATED BY RARE-EARTH AND TRANSITIONAL-METAL IONS, 1996, 2706 : 260 - 264
  • [39] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, EI
    Kudoyarova, VK
    Kuznetsov, AN
    Fuhs, W
    Weiser, G
    Kuehne, H
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 488 - 492
  • [40] Room-temperature photoluminescence of amorphous hydrogenated silicon carbide doped with erbium
    Terukov, EI
    Kudoyarova, VK
    Kuznetsov, AN
    Fuhs, W
    PHYSICS AND APPLICATIONS OF NON-CRYSTALLINE SEMICONDUCTORS IN OPTOELECTRONICS, 1997, 36 : 474 - 474
12345