GROWTH-BEHAVIOR AND MECHANISM OF ALKYL-DESORPTION-LIMITED EPITAXIAL-GROWTH OF GAAS ON EXACTLY ORIENTED AND VICINAL SUBSTRATES

被引：2
|
作者：
GOTO, S [1 ]
ISHIZAKI, JY [1 ]
FUKUI, T [1 ]
HASEGAWA, H [1 ]
机构：
[1] HOKKAIDO UNIV,INTERFACE QUANTUM ELECTR RES CTR,SAPPORO,HOKKAIDO 060,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 1B期
关键词：
ADLE; TEGA; AFM; MOVPE; VICINAL SUBSTRATES;
D O I：
10.1143/JJAP.33.734
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
New atomically controlled epitaxial growth, called alkyl-desorption-limited epitaxial(ADLE) growth, is studied on (001) exactly oriented and vicinal GaAs substrates. In ADLE growth, the growth rate is limited by the desorption rate of alkyl from organometals rather than by saturation of alkyl adsorption. First, the proposed ADLE growth mechanism is quantitatively confirmed by comparing a new theory of growth based on the alkyl-desorption rate equations with the experimental growth data taken on (001) exactly oriented substrates. Next, the behavior of multi-atomic steps on vicinal substrates is studied using an atomic force microscope (AFM). It is found that the multi-atomic-step heights are reduced during ADLE growth. This new phenomenon is explained by the ADLE growth mechanism.
引用
收藏
页码：734 / 741
页数：8
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