MICROSTRUCTURAL PROPERTIES OF DC MAGNETRON SPUTTERED A-SIH BY IR SPECTROSCOPY

被引：19

作者：

GRACIN, D ^{[1
]}

DESNICA, UV ^{[1
]}

IVANDA, M ^{[1
]}

机构：

[1] RUDJER BOSKOVIC INST, YU-41000 ZAGREB, CROATIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 149卷 / 03期

关键词：

D O I：

10.1016/0022-3093(92)90074-T

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The amorphous hydrogenated silicon thin films, deposited by dc magnetron sputtering, were examined by near infrared and Fourier transformation infrared spectroscopy. It was found that, by increase of the hydrogen concentration from 6 to 32 at.%, the dielectric constant decreases and the frequency of absorption peak, corresponding to stretching vibrations of Si-H bonds, increases. The results were analyzed within the framework of effective medium approach assuming medium composed of Si network and voids decorated with hydrogen atoms. It is concluded that the increase of the hydrogen content is accompanied by an increase of void fraction in the total volume, with an increase of void 'decoration' with hydrogen and also with increased contribution of larger voids. The obtained dependence upon hydrogen concentration agrees well with density measurements and predictions made based on multiple-quantum nuclear magnetic resonance spectroscopy.

引用

页码：257 / 263

页数：7

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