OPTIMIZATION OF THE EPITAXIAL LAYER PROPERTIES FOR LOW-VOLTAGE CAPABILITY VDMOS DEVICES

被引：0
|
作者：
FERNANDEZ, J
BERTA, F
HIDALGO, S
PAREDES, J
REBOLLO, J
MILLAN, J
SERRAMESTRES, F
机构：
来源：
VACUUM | 1989年 / 39卷 / 7-8期
关键词：
D O I：
10.1016/0042-207X(89)90032-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：761 / 763
页数：3
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