INFLUENCE OF THE EPITAXIAL LAYER ON THE CURRENT-VOLTAGE CHARACTERISTICS IN HIGH-VOLTAGE VDMOS DEVICES - ANALYSIS OF THE QUASI-SATURATION POINT

被引：0

作者：

REBOLLO, J ^{[1
]}

MILLAN, J ^{[1
]}

PAREDES, J ^{[1
]}

LORATAMAYO, E ^{[1
]}

SERRAMESTRES, F ^{[1
]}

机构：

[1] UNIV AUTONOMA BARCELONA,DEPT FIS,DIV ELECTRON,BELLATERRA BARCELONA,SPAIN

来源：

VACUUM | 1987年 / 37卷 / 5-6期

关键词：

D O I：

10.1016/0042-207X(87)90320-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：399 / 401

页数：3

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