EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION.

被引：0

作者：

Bhat, K.N. ^{[1
]}

Kumar, M.Jagadesh ^{[1
]}

Ramasubramanian, V. ^{[1
]}

George, Peter ^{[1
]}

机构：

[1] Indian Inst of Technology, Madras, India, Indian Inst of Technology, Madras, India

来源：

IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 05期

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摘要：

引用

页码：1163 / 1169

共 30 条

[1] THE EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (05) : 1163 - 1169
[2] COLLECTOR RECOMBINATION LIFETIME FROM THE QUASI-SATURATION ANALYSIS OF HIGH-VOLTAGE BIPOLAR-TRANSISTORS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (11) : 2395 - 2398
[3] CURRENT VOLTAGE CHARACTERISTICS OF BIPOLAR-TRANSISTORS INCLUDING QUASI-SATURATION, FINITE COLLECTOR LIFETIME, AND HIGH-LOW JUNCTION EFFECTS
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[4] ANALYSIS OF THE QUASI-SATURATION REGION OF HIGH-VOLTAGE VDMOS DEVICES
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[J]. 2002 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 2002, : 83 - 86
[8] Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region
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[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (01) : 1 - 14
[9] SATURATION CHARACTERISTICS OF HIGH-VOLTAGE TRANSISTORS
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[10] Compact modeling of high-voltage LDMOS devices including quasi-saturation
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