EFFECTS OF COLLECTOR LIFETIME ON THE CHARACTERISTICS OF HIGH-VOLTAGE POWER TRANSISTORS OPERATING IN THE QUASI-SATURATION REGION.

被引：0
|
作者：
Bhat, K.N. [1 ]
Kumar, M.Jagadesh [1 ]
Ramasubramanian, V. [1 ]
George, Peter [1 ]
机构：
[1] Indian Inst of Technology, Madras, India, Indian Inst of Technology, Madras, India
来源：
IEEE Transactions on Electron Devices | 1987年 / ED-34卷 / 05期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
下载
收藏
页码：1163 / 1169
相关论文
共 30 条
  • [21] BREAKDOWN VOLTAGES OF BASE COLLECTOR JUNCTIONS OF HIGH-VOLTAGE POWER TRANSISTORS WITH GRADED COLLECTORS
    HASSAN, MMS
    DOMINGOS, H
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1991, 70 (01) : 77 - 83
  • [22] Scalable general high voltage MOSFET model including quasi-saturation and self-heating effects
    Chauhan, Yogesh Singh
    Anghel, Costin
    Krummenacher, Francois
    Maier, Christian
    Gillon, Renaud
    Bakeroot, Benoit
    Desoete, Bart
    Frere, Steven
    Desormeaux, Andre Baguenier
    Sharma, Abhinav
    Declercq, Michel
    Ionescu, Adrian Mihai
    SOLID-STATE ELECTRONICS, 2006, 50 (11-12) : 1801 - 1813
  • [23] INFLUENCE OF NEUTRON RADIATION EFFECTS ON DESIGN OF HIGH-VOLTAGE POWER TRANSISTORS
    GEORGE, WL
    CLARK, LE
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) : 804 - +
  • [24] EDGE EFFECTS IN GLASS-PASSIVATED COLLECTOR-BASE JUNCTIONS OF HIGH-VOLTAGE TRANSISTORS
    SAVINI, A
    DALLAGO, E
    FELICI, M
    PANIGADA, M
    VERSIGLIA, F
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (03): : 116 - 120
  • [25] Effects of drift-region design on the reliability of integrated high-voltage LDMOS transistors
    Chen, Jone F.
    Chen, Shiang-Yu
    Tian, Kuen-Shiuan
    Wu, Kuo-Ming
    Su, Yan-Kuin
    Liu, C. M.
    Hsu, S. L.
    2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2007, : 121 - +
  • [26] ANALYSIS OF THE QUASI-SATURATION BEHAVIOR CONSIDERING THE DRAIN-TO-SOURCE VOLTAGE AND CELL-SPACING EFFECTS FOR A VERTICAL DMOS POWER TRANSISTOR
    LOU, KH
    LIU, CM
    KUO, JB
    SOLID-STATE ELECTRONICS, 1993, 36 (01) : 85 - 91
  • [27] Device-Circuit Co-design for High Performance Level Shifter by Limiting Quasi-saturation Effects in Advanced DeMOS Transistors
    Swain, Peeyusha Saurabha
    Baghini, Maryam Shojaei
    Rao, V. Ramgopal
    Shrivastava, Mayank
    Gossner, Harald
    7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
  • [28] Drift region doping effects on characteristics and reliability of high-voltage n-type metal-oxide-semiconductor transistors
    Chen, Jone F.
    Chang, Chun-Po
    Liu, Yu Ming
    Tsai, Yan-Lin
    Hsu, Hao-Tang
    Chen, Chih-Yuan
    Hwang, Hann-Ping
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (01)
  • [29] Enhanced, breakdown voltage, diminished quasi-saturation, and self-heating effects in SOI thin-film bipolar transistors for improved reliability: A TCAD simulation study
    Roy, Sukhendu Deb
    Kumar, M. Jagadesh
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2006, 6 (02) : 306 - 314
  • [30] Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
    Tsai, Yen-Lin
    Chen, Jone F.
    Shen, Shang-Feng
    Hsu, Hao-Tang
    Kao, Chia-Yu
    Chang, Kuei-Fen
    Hwang, Hann-Ping
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
123