共 50 条
- [2] THE NUCLEATION AND GROWTH OF POLYCRYSTALLINE SILICON-CARBIDE DURING CHEMICAL VAPOR-DEPOSITION [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1990, 200 : 116 - COLL
- [3] UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 134 - 137
- [10] CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE [J]. POWDER METALLURGY INTERNATIONAL, 1980, 12 (03): : 141 - 147