INTERATOMIC POTENTIALS IN SEMICONDUCTORS AND THEIR VALIDITY FOR DEFECT CALCULATIONS

被引：29
|
作者：
STONEHAM, AM
TORRES, VTB
MASRI, PM
SCHOBER, HR
机构：
[1] UNIV AVEIRO, DEPT FIS, P-3800 AVEIRO, PORTUGAL
[2] UNIV LONDON KINGS COLL, LONDON WC2R 2LS, ENGLAND
[3] UNIV MONTPELLIER 2, CNRS, ETUDE SURFACES INTERFACES & COMPOSANTS LAB, F-34060 MONTPELLIER, FRANCE
[4] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-4170 JULICH, FED REP GER
来源：
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1988年 / 58卷 / 01期
关键词：
D O I：
10.1080/01418618808205177
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：93 / 106
页数：14
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