NEAR-ROOM-TEMPERATURE OPERATION OF PB1-XSRXSE INFRARED DIODE-LASERS USING MOLECULAR-BEAM EPITAXY GROWTH TECHNIQUES

被引:47
|
作者
SPANGER, B
SCHIESSL, U
LAMBRECHT, A
BOTTNER, H
TACKE, M
机构
关键词
D O I
10.1063/1.100208
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2582 / 2583
页数:2
相关论文
共 15 条
  • [1] MOLECULAR-BEAM EPITAXY OF PB1-XSRXSE FOR THE USE IN IR DEVICES
    LAMBRECHT, A
    HERRES, N
    SPANGER, B
    KUHN, S
    BOTTNER, H
    TACKE, M
    EVERS, J
    JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) : 301 - 308
  • [2] INFRARED DOUBLE-HETEROSTRUCTURE DIODE-LASERS MADE BY MOLECULAR-BEAM EPITAXY OF PB1-XEUXSE
    TACKE, M
    SPANGER, B
    LAMBRECHT, A
    NORTON, PR
    BOTTNER, H
    APPLIED PHYSICS LETTERS, 1988, 53 (23) : 2260 - 2262
  • [3] MOLECULAR-BEAM EPITAXY GROWTH OF HIGH-PERFORMANCE MIDINFRARED DIODE-LASERS
    TURNER, GW
    CHOI, HK
    CALAWA, DR
    PANTANO, JV
    CHLUDZINSKI, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1266 - 1268
  • [4] ROOM-TEMPERATURE CW OPERATION AT 2.2-MU-M OF GAINASSB/ALGAASSB DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHOI, HK
    EGLASH, SJ
    APPLIED PHYSICS LETTERS, 1991, 59 (10) : 1165 - 1166
  • [5] ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY
    CHIU, TH
    TSANG, WT
    DITZENBERGER, JA
    VANDERZIEL, JP
    APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1051 - 1052
  • [6] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
    CHO, AY
    DIXON, RW
    CASEY, HC
    HARTMAN, RL
    APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503
  • [7] ROOM-TEMPERATURE OPERATION OF 650 NM ALGAAS MULTI-QUANTUM-WELL LASER DIODE GROWN BY MOLECULAR-BEAM EPITAXY
    SAKU, T
    IWAMURA, H
    HIRAYAMA, Y
    SUZUKI, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (02): : L73 - L75
  • [8] LOW-TEMPERATURE GROWTH OF PBTE AND OF PBTE/PB1-XEUXTE MULTIQUANTUM WELLS BY MOLECULAR-BEAM EPITAXY
    SPRINGHOLZ, G
    BAUER, G
    JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) : 157 - 172
  • [9] Room temperature continuous-wave operation of InAs/InP (100) quantum dot lasers grown by gas-source molecular-beam epitaxy
    Li, S. G.
    Gong, Q.
    Lao, Y. F.
    He, K.
    Li, J.
    Zhang, Y. G.
    Feng, S. L.
    Wang, H. L.
    APPLIED PHYSICS LETTERS, 2008, 93 (11)
  • [10] ROOM-TEMPERATURE OPERATION OF AL0.17GA0.83SB/GASB MULTI-QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    OHMORI, Y
    TARUCHA, S
    HORIKOSHI, Y
    OKAMOTO, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L94 - L96