ROOM-TEMPERATURE OPERATION OF INGAASSB/ALGASB DOUBLE HETEROSTRUCTURE LASERS NEAR 2.2 MU-M PREPARED BY MOLECULAR-BEAM EPITAXY

被引:49
|
作者
CHIU, TH [1 ]
TSANG, WT [1 ]
DITZENBERGER, JA [1 ]
VANDERZIEL, JP [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.97471
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1051 / 1052
页数:2
相关论文
共 50 条
  • [1] ROOM-TEMPERATURE CW OPERATION AT 2.2-MU-M OF GAINASSB/ALGAASSB DIODE-LASERS GROWN BY MOLECULAR-BEAM EPITAXY
    CHOI, HK
    EGLASH, SJ
    APPLIED PHYSICS LETTERS, 1991, 59 (10) : 1165 - 1166
  • [2] INGAASSB/ALGAASSB DOUBLE HETEROSTRUCTURE LASER PREPARED BY MOLECULAR-BEAM EPITAXY
    CHIU, TH
    TSANG, WT
    VANDERZIEL, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 808 - 808
  • [3] CONTINUOUS ROOM-TEMPERATURE OPERATION OF GAAS-AL-XGA-1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY
    CHO, AY
    DIXON, RW
    CASEY, HC
    HARTMAN, RL
    APPLIED PHYSICS LETTERS, 1976, 28 (09) : 501 - 503
  • [4] 2.78 MU-M INGAASSB/ALGAASSB MULTIPLE-QUANTUM-WELL LASERS WITH METASTABLE INGAASSB WELLS GROWN BY MOLECULAR-BEAM EPITAXY
    LEE, H
    YORK, PK
    MENNA, RJ
    MARTINELLI, RU
    GARBUZOV, D
    NARAYAN, SY
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1354 - 1357
  • [5] ROOM-TEMPERATURE 2.78 MU-M ALGAASSB/INGAASSB QUANTUM-WELL LASERS
    LEE, H
    YORK, PK
    MENNA, RJ
    MARTINELLI, RU
    GARBUZOV, DZ
    NARAYAN, SY
    CONNOLLY, JC
    APPLIED PHYSICS LETTERS, 1995, 66 (15) : 1942 - 1944
  • [6] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M
    HSIEH, JJ
    APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285
  • [7] 0.67 MU-M ROOM-TEMPERATURE OPERATION OF GAINASP ALGAAS LASERS ON GAAS PREPARED BY LPE
    KISHINO, K
    KOIZUMI, Y
    YOKOCHI, A
    KINOSHITA, S
    TAKO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L740 - L742
  • [8] ROOM-TEMPERATURE OPERATION OF THE INGAASSB-ALGAASSB DH LASER AT 1.8 MU-M WAVELENGTH
    KOBAYASHI, N
    HORIKOSHI, Y
    UEMURA, C
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : L30 - L32
  • [9] ROOM-TEMPERATURE GAINASSB/ALGAASSB DH INJECTION-LASERS AT 2.2 MU-M
    CANEAU, C
    SRIVASTAVA, AK
    DENTAI, AG
    ZYSKIND, JL
    POLLACK, MA
    ELECTRONICS LETTERS, 1985, 21 (18) : 815 - 817
  • [10] ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
    YARN, KF
    WANG, YH
    CHANG, CY
    PHILOSOPHICAL MAGAZINE LETTERS, 1990, 61 (06) : 339 - 342