2.78 MU-M INGAASSB/ALGAASSB MULTIPLE-QUANTUM-WELL LASERS WITH METASTABLE INGAASSB WELLS GROWN BY MOLECULAR-BEAM EPITAXY

Multiple quantum-well (MQW) lasers with metastable InGaAsSb quantum wells and AlGaAsSb barriers and claddings were grown on n(+)-GaSb(100) substrates by molecular beam epita,uy. The lasers exhibited a. lasing wavelength of 2.78 mu m and pulsed operation up to 60 degrees C. Pulsed threshold current of 1.1 A. corresponding to a current density of 9.5 kA/cm(2), and maximum output power of 30 mW have been achieved at 15 degrees C for broad-area lasers. The characteristic temperature was 58 K over the temperature range of 0 to 40 degrees C. This is the longest emission wavelength reported for quantum-well lasers operating at room temperature.