2-WAVE MIXING IN PHOTOREFRACTIVE ALGAAS/GAAS QUANTUM-WELLS

被引:48
|
作者
WANG, QN [1 ]
NOLTE, DD [1 ]
MELLOCH, MR [1 ]
机构
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
关键词
D O I
10.1063/1.105613
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed two-wave mixing in semi-insulating AlGaAs/GaAs multiple quantum well structures at wavelengths near the exciton absorption. The photorefractive index changes are caused by the Franz-Keldysh effect on quantum-confined excitons. Photorefractive gains larger than 200 cm-1 are obtained for the first time at wavelengths near 836 nm using stationary fringes and dc applied fields up to 5 kV/cm. The direction of energy transfer between the two beams is determined by the direction of applied electric field.
引用
收藏
页码:256 / 258
页数:3
相关论文
共 50 条
  • [31] STUDY ON INTERFACE ROUGHNESS IN GAAS/ALGAAS SINGLE QUANTUM-WELLS
    WANG, XH
    ZHENG, HZ
    YU, T
    LAIHO, RN
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (03) : 359 - 362
  • [32] EXCITON PHOTOLUMINESCENCE OF SURFACE QUANTUM-WELLS IN A GAAS/ALGAAS SYSTEM
    ASTRATOV, VN
    VLASOV, YA
    SEMICONDUCTORS, 1993, 27 (07) : 606 - 612
  • [33] THE EFFECT OF PRESSURE ON THE LUMINESCENCE FROM GAAS/ALGAAS QUANTUM-WELLS
    PERLIN, P
    TRZECIAKOWSKI, W
    LITWINSTASZEWSKA, E
    MUSZALSKI, J
    MICOVIC, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2239 - 2246
  • [34] PROCESSING PARAMETERS FOR SELECTIVE INTERMIXING OF GAAS/ALGAAS QUANTUM-WELLS
    WEN, X
    CHI, JY
    KOTELES, ES
    ELMAN, B
    MELMAN, P
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (06) : 539 - 542
  • [35] PICOSECOND PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF GAAS/ALGAAS QUANTUM-WELLS
    FREEMAN, MR
    AWSCHALOM, DD
    HONG, JM
    APPLIED PHYSICS LETTERS, 1990, 57 (07) : 704 - 706
  • [36] CATHODOLUMINESCENCE AND PHOTOLUMINESCENCE STUDIES OF DISLOCATIONS IN GAAS/ALGAAS QUANTUM-WELLS
    ARAUJO, D
    OELGART, G
    GANIERE, JD
    REINHART, FK
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1997 - 2003
  • [37] OPTICAL INVESTIGATION OF IMPLANTATION DAMAGE IN GAAS/ALGAAS QUANTUM-WELLS
    KIESLICH, A
    STRAKA, J
    FORCHEL, A
    STOFFEL, NG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 616 - 619
  • [38] SHALLOW IMPURITY LEVELS IN ALGAAS/GAAS SEMICONDUCTOR QUANTUM-WELLS
    MASSELINK, WT
    CHANG, YC
    MORKOC, H
    REYNOLDS, DC
    LITTON, CW
    BAJAJ, KK
    YU, PW
    SOLID-STATE ELECTRONICS, 1986, 29 (02) : 205 - 214
  • [39] SUBPICOSECOND DYNAMICS OF ELECTRON INJECTION INTO GAAS/ALGAAS QUANTUM-WELLS
    GOODNICK, SM
    LUGLI, P
    APPLIED PHYSICS LETTERS, 1987, 51 (08) : 584 - 586
  • [40] BEAM CLEANUP USING PHOTOREFRACTIVE 2-WAVE MIXING
    CHIOU, AET
    YEH, P
    OPTICS LETTERS, 1985, 10 (12) : 621 - 623