共 50 条
- [1] BALLISTIC BARRIER PHOTO-EMF OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (02): : 195 - 197
- [2] POLARIZATION DEPENDENCE OF THE EXCITONIC PHOTO-EMF AT THE GALLIUM-ARSENIDE METAL INTERFACE FIZIKA TVERDOGO TELA, 1990, 32 (03): : 950 - 952
- [3] INFLUENCE OF AN OSCILLATORY DEMBER EMF ON THE PHOTO-EMF SPECTRA OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09): : 1052 - 1054
- [4] INFLUENCE OF AN OSCILLATORY DEMBER emf ON THE PHOTO-emf SPECTRA GALLIUM ARSENIDE. Soviet physics. Semiconductors, 1980, 14 (09): : 1052 - 1054
- [5] USE OF THE CONTACT POTENTIAL DIFFERENCE AND SURFACE PHOTO-EMF FOR ESTIMATION OF THE SURFACE-STATE OF GALLIUM-ARSENIDE PLATES AFTER CHEMICAL TREATMENT INDUSTRIAL LABORATORY, 1989, 55 (06): : 696 - 698
- [6] INVESTIGATION OF SURFACE STATES AT GERMANIUM-ELECTROLYTE INTERFACE BY PHOTO-EMF METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 807 - 810
- [10] The photo-emf in selenium JOURNAL OF THE OPTICAL SOCIETY OF AMERICA AND REVIEW OF SCIENTIFIC INSTRUMENTS, 1929, 18 (05): : 370 - 382