EFFECT OF SURFACE-ROUGHNESS ON BREAKDOWN IN SF6

被引:59
|
作者
PEDERSEN, A [1 ]
机构
[1] TECH UNIV LYNGBY,DEPT PHYS,DK-2800 LYNGBY,DENMARK
来源
关键词
D O I
10.1109/T-PAS.1975.32019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1749 / 1754
页数:6
相关论文
共 50 条
  • [21] The influence of surface charge on lightning impulse breakdown of spacers in SF6
    Tenbohlen, S
    Schröder, G
    IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2000, 7 (02) : 241 - 246
  • [22] Impact of Volume Breakdown on Surface Flashover in High Pressure SF6
    Neuber, A. A.
    Krile, J. T.
    Rogers, G.
    Krompholz, H.
    ACTA PHYSICA POLONICA A, 2009, 115 (06) : 995 - 997
  • [23] AN ESTIMATE OF THE SURFACE-ROUGHNESS EFFECT
    BORIE, B
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1981, 14 (AUG) : 219 - 222
  • [24] EFFECT OF TILLAGE ON SURFACE-ROUGHNESS
    ROMKENS, MJM
    WANG, JY
    TRANSACTIONS OF THE ASAE, 1986, 29 (02): : 429 - 433
  • [25] ELECTRICAL BREAKDOWN OF AIR AND SF6 MIXTURES
    MULCAHY, MJ
    PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (11): : 1878 - &
  • [26] Breakdown temperature of electrons in SF6 gas
    Uhm, Han S.
    Choi, Eun H.
    Cho, Guangsup
    Ryu, Han-Yong
    APPLIED PHYSICS LETTERS, 2010, 97 (16)
  • [27] REASONS FOR THE DISPERSION OF BREAKDOWN VOLTAGES IN SF6
    HAUSCHILD, W
    MOSCH, W
    JOURNAL DE PHYSIQUE, 1979, 40 : 251 - 252
  • [28] EFFECT OF SOLID IMPURITIES ON BREAKDOWN IN COMPRESSED SF6 GAS.
    Kuwahara, Hiroshi
    Inamura, Shoichi
    Watanabe, Tsugio
    Arahata, Yoshikuni
    IEEE Transactions on Power Apparatus and Systems, 1974, PAS-93 (05): : 1546 - 1555
  • [29] EFFECT OF CONDUCTING PARTICLES ON AC CORONA AND BREAKDOWN IN COMPRESSED SF6
    COOKSON, AH
    SOMMERMAN, GM
    FARISH, O
    IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS, 1972, PA91 (04): : 1329 - +
  • [30] Effect of initiatory electrons on breakdown characteristics of SF6 and its mixtures
    Qiu, XQ
    Chalmers, ID
    Qiu, Y
    IEE PROCEEDINGS-SCIENCE MEASUREMENT AND TECHNOLOGY, 2001, 148 (02) : 80 - 83