CALCULATION OF ENERGY-BAND STRUCTURE OF SILICON BY OPW METHOD

被引：0
|
作者：
FARBEROVICH, OV [1 ]
DOMASHEVSKAYA, EP [1 ]
机构：
[1] VORONEZH STATE UNIV,VORONEZH,USSR
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：684 / 685
页数：2
相关论文
共 50 条
  • [21] ENERGY BAND STRUCTURE OF II-VI COMPOUNDS - 1. CALCULATION BY THE MODIFIED OPW METHOD AND INTERPRETATION.
    Kurganskii, S.I.
    Farberovich, O.V.
    Domashevskaya, E.P.
    Soviet physics. Semiconductors, 1980, 14 (07): : 775 - 780
  • [22] PROBLEMS OF THE OPW METHOD .2. CALCULATION OF THE BAND-STRUCTURE OF ZNS AND CDS
    FARBEROVICH, OV
    KURGANSKII, SI
    DOMASHEVSKAYA, EP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 97 (02): : 631 - 640
  • [23] ENERGY-BAND STRUCTURE OF GERMANIUM-SILICON SOLID-SOLUTIONS
    KUSTOV, EF
    MELNIKOV, EA
    SUTCHENKOV, AA
    LEVADNII, AI
    FILIKOV, VA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 481 - 482
  • [24] ENERGY-BAND CALCULATION OF LACU6
    HARIMA, H
    YANASE, A
    HASEGAWA, A
    PHYSICA B, 1990, 165 : 341 - 342
  • [25] New choosing method of envelope function for the energy-band calculation of superlattices with variational method
    Chen, Weiyou
    High Technology Letters, 1995, 5 (06):
  • [26] ENERGY-BAND STRUCTURE OF MAGNESIUM FLUORIDE USING LCAO METHOD
    CHANEY, RC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 410 - 410
  • [27] ENERGY-BAND ASSOCIATED WITH DANGLING BONDS IN SILICON
    MANTOVANI, S
    DELPENNINO, U
    VALERI, S
    PHYSICAL REVIEW B, 1980, 22 (04): : 1926 - 1932
  • [28] NONRELATIVISTIC ENERGY-BAND STRUCTURE OF AU
    SCHLOSSE.H
    PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (02): : 491 - &
  • [29] MODEL CALCULATION OF THE EFFECT OF HYDRATION ON THE ENERGY-BAND STRUCTURE OF A NUCLEOTIDE BASE STACK
    OTTO, P
    LADIK, J
    CORONGIU, G
    SUHAI, S
    FORNER, W
    JOURNAL OF CHEMICAL PHYSICS, 1982, 77 (10): : 5026 - 5029
  • [30] ENERGY-BAND DISTORTION IN HIGHLY DOPED SILICON
    LEE, DS
    FOSSUM, JG
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 626 - 634
12345