共 50 条
- [1] RELIABILITY OF InGaAsInP LONG-WAVELENGTH P-I-N PHOTODIODES PASSIVATED WITH POLYIMIDE THIN FILM. [J]. Journal of Lightwave Technology, 1985, LT-4 (07):
- [2] P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications [J]. 2000, IEEE, Piscataway, NJ, United States
- [3] Absorption saturation nonlinearity in InGaAs/InP p-i-n photodiodes [J]. 2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 426 - 427
- [5] Low dark current InGaAs(P)/InP p-i-n photodiodes [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (7 A): : 4249 - 4252
- [6] Low dark current InGaAs(P)/InP p-i-n photodiodes [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (7A): : 4249 - 4252
- [7] Low dark current InGaAs(P)/InP p-i-n photodiodes [J]. PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 95 - 98
- [8] Simulation of electrical and optical characteristics for InP/InGaAs/InP p-i-n photodiodes [J]. 35TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ 2010), 2010,
- [9] Cadmium sulfide passivation of InGaAs/InP mesa p-i-n photodiodes [J]. Journal of Electronic Materials, 2005, 34 : 1368 - 1372
- [10] INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1416 - 1418