RANDOM DISTRIBUTION OF GA AND AL ATOMS IN MBE GROWN (AL0.5GA0.5)AS

被引:6
|
作者
KASHIHARA, Y [1 ]
KASHIWAGURA, N [1 ]
SAKATA, M [1 ]
HARADA, J [1 ]
ARII, T [1 ]
机构
[1] NATL INST PHYSIOL SCI,OKAZAKI,AICHI 444,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 12期
关键词
INTERACTION PARAMETER - LAVE SCATTERING - SHORT RANGE ORDER (SRO);
D O I
10.1143/JJAP.23.L901
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L901 / L903
页数:3
相关论文
共 50 条
  • [21] OBSERVATION OF A NOVEL FORM OF ORDERING IN AL0.5IN0.5AS AND (GA,AL)0.5IN0.5AS
    BAXTER, CS
    STOBBS, WM
    BROOM, RF
    REITHMAIER, JP
    JOURNAL OF CRYSTAL GROWTH, 1993, 131 (3-4) : 419 - 425
  • [22] Negative and persistent positive photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As
    Bogdanov, EV
    Ilievsky, AA
    Minina, NY
    Savin, AM
    Hansen, OP
    Sorensen, CB
    Kraak, W
    PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES: REVIEWS AND SHORT NOTES TO NANOMEETING-2001, 2001, : 130 - 133
  • [23] ELECTRONIC-STRUCTURE AND DENSITY OF STATES OF THE RANDOM AL0.5GA0.5AS, GAAS0.5P0.5, AND GA0.5IN0.5AS SEMICONDUCTOR ALLOYS
    MAGRI, R
    FROYEN, S
    ZUNGER, A
    PHYSICAL REVIEW B, 1991, 44 (15): : 7947 - 7964
  • [24] Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5 As quantum dots grown on (311)A GaAs substrate
    Chen, Y.
    Li, G.H.
    Zhu, Z.M.
    Han, H.X.
    Wang, Z.P.
    Zhou, W.
    Wang, Z.G.
    2000, American Institute of Physics Inc. (76)
  • [25] He++-irradiated beryllium-doped Al0.5Ga0.5As MBE layers
    Szatkowski, J
    Placzek-Popko, E
    Sieranski, K
    Johansen, A
    Fialkowski, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 178 : 252 - 255
  • [26] Inelastic phonon scattering in long-range-ordered (Al0.5Ga0.5)0.5In0.5P -: art. no. 125210
    Kita, T
    Yamashita, K
    Nishino, T
    Wang, Y
    Murase, K
    PHYSICAL REVIEW B, 2001, 63 (12):
  • [27] Positive delayed photoconductivity in double heterostructures Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As of the p-type
    W. Kraak
    N. Ya. Minina
    A. M. Savin
    A. A. Ilievsky
    K. B. Sorenson
    Technical Physics Letters, 2002, 28 : 527 - 529
  • [28] Positive delayed photoconductivity in double heterostructures Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As of the p-type
    Kraak, W
    Minina, NY
    Savin, AM
    Ilievsky, AA
    Sorenson, KB
    TECHNICAL PHYSICS LETTERS, 2002, 28 (06) : 527 - 529
  • [29] Deep levels in He++ irradiated Be-doped Al0.5Ga0.5As MBE layers
    Szatkowski, J.
    Placzek-Popko, E.
    Sieranski, K.
    Hansen, O.P.
    Johansen, A.
    Soerensen, C.
    Physica B: Condensed Matter, 1999, 273 : 718 - 721
  • [30] Photoluminescence from metastable states in long-range ordered (Al0.5Ga0.5)(0.51)In0.49P
    Yamashita, K
    Kita, T
    Nakayama, H
    Nishino, T
    PHYSICAL REVIEW B, 1997, 55 (07): : 4411 - 4416