HIGH-EFFICIENCY ION-IMPLANTED SILICON SOLAR-CELLS

被引：53

作者：

SPITZER, MB

TOBIN, SP

KEAVNEY, CJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 05期

关键词：

D O I：

10.1109/T-ED.1984.21567

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：546 / 550

页数：5

共 50 条

[31] TECHNOLOGIES FOR HIGH-EFFICIENCY THIN POLYCRYSTALLINE SILICON SOLAR-CELLS
SHIBUYA, N
OKAMOTO, K
NAMMORI, T
NUNOI, T
[J]. SHARP TECHNICAL JOURNAL, 1990, (45): : 33 - 36
[32] LARGE AREA HIGH-EFFICIENCY POLYCRYSTALLINE SILICON SOLAR-CELLS
CHU, TL
CHU, SS
DUH, KY
YOO, HI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (08) : C274 - C274
[33] P+/N HIGH-EFFICIENCY SILICON SOLAR-CELLS
BAE, MS
DAIELLO, RV
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 285 - 287
[34] HIGH-EFFICIENCY PRISMATIC COVER SILICON CONCENTRATOR SOLAR-CELLS
ZHAO, J
WANG, A
BLAKERS, AW
GREEN, MA
[J]. CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 529 - 531
[35] DEVELOPMENT OF HIGH-EFFICIENCY SINGLE CRYSTALLINE SILICON SOLAR-CELLS
SHIBUYA, N
OKAMOTO, S
NAMMORI, T
NUNOI, T
SAWAI, H
[J]. SHARP TECHNICAL JOURNAL, 1993, (55): : 17 - 20
[36] FLASH-LAMP ANNEALING OF ION-IMPLANTED SILICON AND ITS APPLICATION TO SOLAR-CELLS
USAMI, A
YOSHIDA, N
INOUE, Y
[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (06) : 166 - 168
[37] CHARACTERIZATION OF THERMALLY DIFFUSED AND ION-IMPLANTED SEMI-CRYSTALLINE SILICON SOLAR-CELLS
FINETTI, M
OSTOJA, P
SOLMI, S
ZINI, Q
[J]. SOLAR CELLS, 1980, 2 (02): : 101 - 107
[38] ION-IMPLANTED LASER-ANNEALED GAAS SOLAR-CELLS
FAN, JCC
CHAPMAN, RL
DONNELLY, JP
TURNER, GW
BOZLER, CO
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 780 - 782
[39] HIGH-EFFICIENCY GAAS SOLAR-CELLS
KNECHTLI, RC
LOO, RY
KAMATH, GS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) : 577 - 588
[40] HIGH-EFFICIENCY CONCENTRATOR SOLAR-CELLS
FRAAS, LM
CAPE, JA
PARTAIN, LD
MCLEOD, PS
[J]. SOLAR CELLS, 1984, 12 (1-2): : 67 - 80

← 1 2 3 4 5 →