SOLUTE STRIATIONS IN CZOCHRALSKI-GROWN SILICON CRYSTALS - EFFECT OF CRYSTAL ROTATION AND GROWTH RATES

被引：16

|

作者：

CARRUTHERS, JR

BENSON, KE

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 06期

关键词：

D O I：

10.1063/1.1753883

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：100 / 102

页数：3

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