Scanning tunneling microscopy (STM) was used to study morphological changes of a Pt thin film deposited on highly oriented pyrolytic graphite (HOPG) during an annealing process. In air, it was possible to image the morphology of the thin film with a vertical resolution of 0.5 angstrom and a lateral resolution of 20 angstrom. Surface structural change was observed after the annealing processes. When the annealing temperature was below 573 K, surface morphology changed only slightly. Between 573 and 873 K, the originally uniformly distributed rolling hills of Pt coagulated into larger clumps. Above 873 K, Pt crystal facets started to form on the surface. At 1123 K, a large portion of the surface turned into well defined Pt crystal facets. Above 1123 K, the Pt film started to crack and formed scattered crystals on the HOPG surface. A complementary X-ray diffraction measurement showed that the crystallized Pt film was preferentially oriented with the (111) plane parallel to the substrate graphite (0001) basal plane, indicating epitaxy of the Pt overlayer with the graphite substrate underneath.
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Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, JapanNagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan
Wang, Zhi-Hong
Kanai, Kaname
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Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, JapanNagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan
Kanai, Kaname
Iketaki, Kai
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Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, JapanNagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan
Iketaki, Kai
Ouchi, Yukio
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Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, JapanNagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan
Ouchi, Yukio
Seki, Kazuhiko
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Nagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan
Nagoya Univ, Inst Adv Res, Chikusa Ku, Aichi 4648602, JapanNagoya Univ, Dept Chem, Grad Sch Sci, Chikusa Ku, Aichi 4648602, Japan