SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE SILICON INVERSION LAYERS

被引：28

作者：

BANGERT, E ^{[1
]}

LANDWEHR, G ^{[1
]}

机构：

[1] UNIV WURZBURG,INST PHYS,D-8700 WURZBURG,FED REP GER

来源：

SURFACE SCIENCE | 1976年 / 58卷 / 01期

关键词：

D O I：

10.1016/0039-6028(76)90123-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：138 / 140

页数：3

共 50 条

[1] SELF-CONSISTENT CALCULATIONS OF ELECTRIC SUBBANDS IN P-TYPE GAALAS-GAAS HETEROJUNCTIONS
BANGERT, E
LANDWEHR, G
[J]. SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) : 363 - 368
[2] SELF-CONSISTENT CALCULATIONS OF LANDAU-LEVELS FOR SYMMETRICAL P-TYPE INVERSION-LAYERS
LATUSSEK, V
BANGERT, E
LANDWEHR, G
[J]. ANNALEN DER PHYSIK, 1991, 48 (06) : 394 - 414
[3] SELF-CONSISTENT CALCULATIONS IN SILICON-CARBIDE INVERSION-LAYERS
OUISSE, T
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 2092 - 2097
[4] Self-consistent calculations for n-type hexagonal SiC inversion layers
Pennington, G
Goldsman, N
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 95 (08) : 4223 - 4234
[5] MOBILITY OF HOLES IN P-TYPE SILICON DETERMINED BY THE SELF-CONSISTENT METHOD
TJAPKIN, DA
TOSIC, TI
JEVTIC, MM
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 667 - 673
[6] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[7] SELF-CONSISTENT NUMERICAL-SOLUTIONS OF PARA-TYPE INVERSION LAYERS IN SILICON MOS DEVICES
GARCIA, N
[J]. SOLID STATE COMMUNICATIONS, 1976, 18 (08) : 1021 - 1023
[8] N-INVERSION LAYERS ON OXIDIZED P-TYPE SILICON
LEUENBERGER, F
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11): : 1761 - +
[9] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS
COLMAN, D
BATE, RT
MIZE, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &
[10] CONDUCTION IN QUANTIZED SILICON INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS
NELSON, AR
BROWN, E
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1664 - 1668

← 1 2 3 4 5 →