MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS

被引：176
|
作者：
COLMAN, D
BATE, RT
MIZE, JP
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 04期
关键词：
D O I：
10.1063/1.1656464
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1923 / &
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