TEMPERATURE AND OXYGEN PRESSURE DEPENDENCE OF SILICON CARBIDE OXIDATION

被引：27
|
作者：
PULTZ, WW
机构：
来源：
JOURNAL OF PHYSICAL CHEMISTRY | 1967年 / 71卷 / 13期
关键词：
D O I：
10.1021/j100872a067
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
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页码：4556 / &
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