1.3-MU-M MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN INGAAS MSM PHOTODIODE AND ALGAAS/GAAS HEMTS GROWN ON GAAS

被引：3

作者：

HURM, V ^{[1
]}

BENZ, W ^{[1
]}

BERROTH, M ^{[1
]}

FINK, T ^{[1
]}

FRITZSCHE, D ^{[1
]}

HAUPT, M ^{[1
]}

HOFMANN, P ^{[1
]}

JAKOBUS, T ^{[1
]}

KOHLER, K ^{[1
]}

LUDWIG, M ^{[1
]}

MAUSE, K ^{[1
]}

RAYNOR, B ^{[1
]}

ROSENZWEIG, J ^{[1
]}

机构：

[1] TELEKOM RES,D-64295 DARMSTADT,GERMANY

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 01期

关键词：

INTEGRATED OPTOELECTRONICS; OPTICAL RECEIVERS; METAL-SEMICONDUCTOR-METAL STRUCTURES; PHOTODIODES; HIGH ELECTRON MOBILITY TRANSISTORS;

D O I：

10.1049/el:19950004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first 1.3 mu m monolithic integrated optoelectronic receiver using an InGaAs MSM photodiode and AlGaAs/GaAs HEMTs grown on a GaAs substrate has been fabricated. At each differential output of the implemented multistage amplifier the transimpedance is 26.8k Omega (into 50 Omega). The bandwidth of 430 MHz implies suitability for transmission rates up to 622Mbit/s.

引用

页码：67 / 68

页数：2

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