STUDY OF INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS BY OPTICALLY DETECTED CYCLOTRON-RESONANCE

被引：5

作者：

CHEN, YF ^{[1
]}

SHEN, JL ^{[1
]}

DAI, YD ^{[1
]}

JAN, GJ ^{[1
]}

LIN, HH ^{[1
]}

机构：

[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 10764,TAIWAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 19期

关键词：

D O I：

10.1063/1.113161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an investigation of optical and electronic properties in InAlAs/InGaAs heterojunction bipolar transistor layers by optical detection of cyclotron resonance (ODCR). Strong ODCR spectra structured by quantum oscillations have been observed, from which the effective mass and the carrier concentration of the twoâdimensional electron gas can be obtained. The measured cyclotron mass is heavier than the conductionâbandâedge mass in bulk InGaAs. We find that the carrier concentration increases with the spacer thickness. Quite unexpectedly, we also find that the effective mass increases with decreasing the carrier concentration. © 1995, American Institute of Physics. All rights reserved.

引用

下载

页码：2543 / 2545

页数：3

共 50 条

[11] BIAS-DEPENDENCE OF THE INTRINSIC ELEMENT VALUES OF INGAAS/INALAS/INP INVERTED HETEROJUNCTION BIPOLAR-TRANSISTOR
MESKOOB, B
PRASAD, S
VAI, M
VLCEK, JC
SATO, H
FONSTAD, CG
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1992, 40 (05) : 1012 - 1014
[12] SELF-ALIGNED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A BURIED SUBCOLLECTOR GROWN BY SELECTIVE EPITAXY
SONG, JI
FREI, MR
HAYES, JR
BHAT, R
COX, HM
IEEE ELECTRON DEVICE LETTERS, 1994, 15 (04) : 123 - 125
[13] PHOTOREFLECTANCE CHARACTERIZATION OF AN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURE
YAN, D
POLLAK, FH
BOCCIO, VT
LIN, CL
KIRCHNER, PD
WOODALL, JM
GEE, RC
ASBECK, PM
APPLIED PHYSICS LETTERS, 1992, 61 (17) : 2066 - 2068
[14] OPTICALLY DETECTED CYCLOTRON-RESONANCE IN GE, SI AND ZNSE
OHYAMA, T
TOMARU, T
OTSUKA, E
PHYSICA B, 1993, 184 (1-4): : 141 - 148
[15] OPTICALLY DETECTED CYCLOTRON-RESONANCE MEASUREMENTS IN ALO.48IN0.52AS MBE LAYERS
WRIGHT, MG
KANAAH, A
CAVENETT, BC
JOHNSON, GR
DAVEY, ST
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) : 590 - 592
[16] DAMAGE INTRODUCTION IN GAAS/ALGAAS AND INGAAS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES DURING ELECTRON-CYCLOTRON-RESONANCE PLASMA PROCESSING
REN, F
FULLOWAN, TR
PEARTON, SJ
LOTHIAN, JR
ESAGUI, R
ABERNATHY, CR
HOBSON, WS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04): : 1768 - 1771
[17] OPTICALLY DETECTED CYCLOTRON-RESONANCE IN TILTED MAGNETIC-FIELD IN A GAAS-GAALAS HETEROJUNCTION
DREMIN, AA
MALYAVKIN, AV
JETP LETTERS, 1992, 56 (02) : 113 - 117
[18] A SMALL-SIGNAL EQUIVALENT-CIRCUIT FOR THE COLLECTOR-UP INGAAS/INALAS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR
MESKOOB, B
PRASAD, S
VAI, M
FONSTAD, CG
VLCEK, JC
SATO, H
BULUTAY, C
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2629 - 2632
[19] ABNORMAL REDISTRIBUTION OF ZN IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR STRUCTURES
KURISHIMA, K
KOBAYASHI, T
GOSELE, U
APPLIED PHYSICS LETTERS, 1992, 60 (20) : 2496 - 2498
[20] PHOTOLUMINESCENCE INVESTIGATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS
TEWS, H
NEUMANN, R
ZWICKNAGL, P
SCHAPER, U
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 341 - 346

← 1 2 3 4 5 →