共 50 条
- [31] PHOTO-LUMINESCENCE OF COPPER-DOPED N-TYPE GAAS AFTER IRRADIATION BY 2.2 MEV ELECTRONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02): : 715 - 719
- [32] Effects of microwave electric fields on the luminescence of n- and p-type GaAs PHYSICAL REVIEW B, 1997, 56 (19): : 12434 - 12439
- [33] INFLUENCE OF RE-EMISSION ON CARRIER TRANSPORT IN P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (12): : 1430 - 1432
- [35] STM light emission from p-type GaAs (110) surface SPATIALLY RESOLVED CHARACTERIZATION OF LOCAL PHENOMENA IN MATERIALS AND NANOSTRUCTURES, 2003, 738 : 149 - 154
- [37] OPTICAL-CONSTANTS OF N-TYPE AND P-TYPE GAAS BETWEEN 2.5 AND 3.5 EV PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (01): : 409 - 414
- [39] EFFECT OF 2.2 MEV ELECTRON-IRRADIATION AND ANNEALING ON THE 1.37 EV EMISSION BAND IN ZINC-DOPED P-TYPE GAAS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02): : 625 - 630
- [40] PHOTO-HALL EFFECT AND PHOTOCONDUCTIVITY IN P-TYPE EPITAXIAL GAAS-CR JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (33): : 6865 - 6879