STEADY-STATE TRANSPORT IN TRAP-DOMINATED RELAXATION SEMICONDUCTORS

被引：18
|
作者：
SCHETZINA, JF [1 ]
机构：
[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27607
来源：
PHYSICAL REVIEW B | 1975年 / 11卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.11.4994
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：4994 / 4998
页数：5
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