PRACTICAL INTERPRETATION OF X-RAY ROCKING CURVES FROM SEMICONDUCTOR HETEROEPITAXIAL LAYERS

被引：19
|
作者：
HALLIWELL, MAG
机构：
[1] Philips Analytical X-Ray, Almelo, 7602 EA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1994年 / 58卷 / 03期
关键词：
D O I：
10.1007/BF00324368
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
X-ray rocking curves are widely used to study semiconductor heteroepitaxial structures. Examples are given of the use of rocking curves to investigate crystal growth problems, determine layer growth rates, confirm layer thicknesses and to determine the state of relaxation in layers which are above the critical thickness. The application of dynamic simulation and Fourier transformation to the raw data as tools to interpret data from multilayer structures is discussed.
引用
收藏
页码：135 / 140
页数：6
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