METAL-NONMETAL TRANSITION IN SEMICONDUCTOR MELTS WITH 3d METAL ADMIXTURES

被引：0

作者：

Sklyarchuk, V. ^{[1
]}

Plevachuk, Yu. ^{[1
]}

Mudry, S. ^{[1
]}

Shtablavyi, I. ^{[1
]}

机构：

[1] Ivan Franko Natl Univ Lviv, Dept Met Phys, 8 Kyryla & Mephodija St, UA-79005 Lvov, Ukraine

来源：

JOURNAL OF PHYSICAL STUDIES | 2007年 / 11卷 / 02期

关键词：

semiconductor-metal transition; electrical conductivity; thermoelectric power; resonance scattering;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical conductivity and thermoelectric power measurements were performed for liquid semiconductor alloys Se0.5Te0.5 doped with 3d metals in a wide temperature range (up to 1600 K) under ambient pressures of argon gas (up to 35 MPa). The structural changes were studied by means of the X-ray diffraction method. The structure factors are analyzed. The 3d metal admixtures increase the electrical conductivity, decrease the thermoelectric power and affect the temperature of the semiconductor-metal transition. The results are interpreted in the frame of the model describing a mechanism of the electron spectrum evolution in liquid semiconductors, which takes into account the charge resonance scattering on the virtual bound states, occurring due to the 3d admixture metal states in the semiconductor matrix.

引用

页码：190 / 194

页数：5

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