INTERNATIONAL-CONFERENCE ON THE PHYSICS AND TECHNOLOGY OF COMPENSATED SEMICONDUCTORS

被引：0

作者：

GOPALAM, BSV

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来源：

JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH | 1985年 / 44卷 / 08期

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T [工业技术];

学科分类号：

08 ;

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引用

页码：414 / 415

页数：2

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[21] XXI INTERNATIONAL-CONFERENCE ON HIGH-ENERGY PHYSICS
EFREMOV, AV
[J]. USPEKHI FIZICHESKIKH NAUK, 1983, 140 (01): : 153 - 159
[22] INTERNATIONAL-CONFERENCE ON HIGH-ENERGY PHYSICS AND ASTROPHYSICS
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[J]. JOURNAL OF SCIENTIFIC & INDUSTRIAL RESEARCH, 1988, 47 (01): : 3 - 7
[23] INTERNATIONAL-CONFERENCE - ADVANCED REACTORS - PHYSICS, ECONOMICS AND DESIGN
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[J]. SOVIET ATOMIC ENERGY, 1975, 38 (05): : 437 - 440
[24] 6TH INTERNATIONAL-CONFERENCE ON ATOMIC PHYSICS
RYSAVY, M
[J]. CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1979, 29 (02): : 188 - 189
[25] INTERNATIONAL-CONFERENCE ON DEEP IMPURITY LEVELS IN SEMICONDUCTORS, YSTAD 1977
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[J]. CESKOSLOVENSKY CASOPIS PRO FYSIKU SEKCE A, 1978, 28 (02): : 183 - 184
[26] 15TH INTERNATIONAL-CONFERENCE ON AMORPHOUS-SEMICONDUCTORS
不详
[J]. PTB-MITTEILUNGEN, 1993, 103 (06): : 525 - 526
[27] 12TH INTERNATIONAL-CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, THESSALONIKI, GREECE, AUGUST 6-10, 1990
ZAVARITSKAYA, EI
IPATOVA, IA
MIRLIN, DN
MURZIN, VN
PERMOGOROV, SA
PIKUS, GE
SURIS, RA
TIMOFEEV, VB
TIKHODEEV, SG
SHEINKMAN, MK
AKIMCHENKO, IP
VAVILOV, VS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (07): : 762 - 768
[28] THE 16TH INTERNATIONAL-CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS HELD SEPTEMBER 6-10 1982 IN MONTPELLIER
不详
[J]. PTB-MITTEILUNGEN, 1983, 93 (01): : 43 - 43
[29] PROCEEDINGS OF INTERNATIONAL CONFERENCE ON PHYSICS OF SEMICONDUCTORS - OPENING ADDRESS
MUTO, T
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : R1 - &
[30] PROCEEDINGS OF INTERNATIONAL CONFERENCE ON PHYSICS OF SEMICONDUCTORS - CLOSING ADDRESSES
BURSTEIN, E
POLDER, D
FAN, HY
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 767 - &

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