MODELING OF EDGE THRESHOLD VOLTAGE OF MESA-ISOLATED N-CHANNEL MOSFETS ON FULLY-DEPLETED THIN-FILM SOI

被引：1
|
作者：
PARK, JW [1 ]
HAN, CH [1 ]
KIM, CK [1 ]
机构：
[1] KOREA ADV INST SCI & TECHNOL,DEPT ELECT ENGN,TAEJON 305701,SOUTH KOREA
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 07期
关键词：
D O I：
10.1016/0038-1101(94)90206-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：1449 / 1452
页数：4
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