ANALYSIS OF A MICROSTRIP STEP DISCONTINUITY FABRICATED ON A METAL-INSULATOR-SEMICONDUCTOR (MIS) SUBSTRATE

被引:2
|
作者
LIVERNOIS, TG
EAST, JR
机构
[1] Ford Motor Company Dearborn, Michigan
[2] Center for High Frequency Electronics, University of Michigan, Ann Arbor, Michigan
关键词
MIS SUBSTRATE; COUPLED INTEGRAL EQUATIONS; MICROSTRIP DISCONTINUITY; SCATTERING PARAMETERS;
D O I
10.1002/mop.4650051303
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A space-domain coupled integral equation analysis is used to compute the two-dimensional surface current distribution on a basic microstrip step discontinuity fabricated on an MIS substrate. The two-port scattering parameters are computed from the surface current and their accuracy is verified through comparison with a measured data.
引用
收藏
页码:661 / 666
页数:6
相关论文
共 50 条
  • [41] Multiple switching performances of a GaAs-InGaAs metal-insulator-semiconductor (MIS) like structure
    Liu, WC
    Laih, LW
    Chen, JY
    Wang, WC
    Lin, PH
    [J]. PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 310 - 315
  • [42] Impedance spectroscopy of Al/AlN/n-Si metal-insulator-semiconductor (MIS) structures
    Schmidt, Rainer
    Mayrhofer, Patrick
    Schmid, Ulrich
    Bittner, Achim
    [J]. JOURNAL OF APPLIED PHYSICS, 2019, 125 (08)
  • [43] A COMPREHENSIVE ANALYTICAL MODEL FOR METAL-INSULATOR-SEMICONDUCTOR (MIS) DEVICES - A SOLAR-CELL APPLICATION
    DOGHISH, MY
    HO, FD
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1446 - 1454
  • [44] ANALYTICAL EXPRESSIONS FOR TUNNEL CURRENTS IN METAL-INSULATOR-METAL (MIM) AND METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES IN A 2-BAND MODEL
    HABIB, SED
    SIMMONS, JG
    [J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 87 - 92
  • [45] Characterization of polymeric metal-insulator-semiconductor diodes
    Grecu, S
    Bronner, M
    Opitz, A
    Brütting, W
    [J]. SYNTHETIC METALS, 2004, 146 (03) : 359 - 363
  • [46] A Dopingless FET With Metal-Insulator-Semiconductor Contacts
    Kao, Kuo-Hsing
    Chen, Liang-Yu
    [J]. IEEE ELECTRON DEVICE LETTERS, 2017, 38 (01) : 5 - 8
  • [47] An avalanche photodiode with metal-insulator-semiconductor properties
    Z. Ya. Sadygov
    T. M. Burbaev
    V. A. Kurbatov
    [J]. Semiconductors, 2001, 35 : 117 - 121
  • [48] On the Capacitance of Piezoelectric Metal-Insulator-Semiconductor Junctions
    Yang, Lei
    Du, Jianke
    Wang, Ji
    Yang, Jiashi
    [J]. FERROELECTRICS LETTERS SECTION, 2021, 48 (1-3) : 1 - 12
  • [49] An avalanche photodiode with metal-insulator-semiconductor properties
    Sadygov, ZY
    Burbaev, TM
    Kurbatov, VA
    [J]. SEMICONDUCTORS, 2001, 35 (01) : 117 - 121
  • [50] InGaN metal-insulator-semiconductor photodetector using AlOas the insulator
    ZHANG KaiXiao
    MA AiBin
    JIANG JingHua
    XU Yan
    TAI Fei
    GONG JiangFeng
    ZOU Hua
    ZHU WeiHua
    [J]. Science China(Technological Sciences), 2013, (03) - 636