INTERBAND ELECTRONIC RAMAN-SCATTERING IN SEMICONDUCTORS INDUCED BY NONPARABOLICITY

被引：1
|
作者：
ISMAILOV, TG
NAZANLY, RA
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1991年 / 164卷 / 02期
关键词：
D O I：
10.1002/pssb.2221640224
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The interband electronic Raman scattering (IERS) of light in narrow-gap semiconductors due to nonparabolicity is investigated in the framework of the two-band Kane model. Bulk and size-quantized thin film cases are considered in detail. The possibilities to determine the semiconductor parameters and also to investigate the semiconductor-semimetal (and vice-versa) transition with the aid of IERS are discussed.
引用
收藏
页码：553 / 560
页数：8
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