INTERFACE CHARACTERIZATION OF ZNSE/GAAS HETEROJUNCTIONS

被引：2
|
作者：
HARIU, T [1 ]
YAMAUCHI, S [1 ]
TANAKA, H [1 ]
ONO, S [1 ]
机构：
[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN
来源：
APPLIED SURFACE SCIENCE | 1991年 / 48-9卷
关键词：
D O I：
10.1016/0169-4332(91)90331-D
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
ZnSe/GaAs heterojunctions were fabricated by a low-temperature plasma-assisted totally dry process consisting of removal of the native oxide layer in a hydrogen plasma, surface treatment in hydrogen plasma containing Se or nitrogen and epitaxial growth of ZnSe in the same chamber. The surface states consist of defect-related surface states superposed on a disorder-induced U-shaped distribution. The energetic position and the density of defect-related surface states, which was clearly revealed when the density of surface states with U-shaped distribution was reduced, depends upon the surface treatment and also upon the GaAs wafers used.
引用
收藏
页码：204 / 208
页数：5
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