Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by molecular beam epitaxy

Using current-voltage and ac conductance measurements, nitrogen-doped ZnSe grown by molecular beam epitaxy on p-GaAs substrates heterostructures was studied. The reverse current-voltage characteristics of the heterojunction show a soft saturation and a hysteresis, A slow current increase takes place following the application of a constant reverse bias until a steady-state value is reached. This behavior is explained in a model involving slow interface states at the heterointerface that result in a voltage-induced barrier lowering. The observation of a broad peak in the ac conductance vs temperature spectra confirms the model. The presence of such states may seriously affect the performance of ZnSe/GaAs-based devices. (C) 1997 American Institute of Physics.