PASSIVATION OF N-DOPANTS AND P-DOPANTS IN ION-IMPLANTED GAAS BY A 2D+ PLASMA

被引：3

作者：

SADANA, DK ^{[1
]}

DESOUZA, JP ^{[1
]}

MARSHALL, ED ^{[1
]}

BARATTE, H ^{[1
]}

CARDONE, F ^{[1
]}

机构：

[1] UNIV FED RIO GRANDE SUL,INST FIS,BR-91500 PORTO ALEGRE,RS,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期

关键词：

D O I：

10.1063/1.104642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.

引用

页码：385 / 387

页数：3

共 23 条

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