DIFFUSION OF LITHIUM IN P-TYPE ZNSE

被引：0
|
作者：
KRASNOV, AN
VAKSMAN, YF
PURTOV, YN
机构：
来源：
SEMICONDUCTORS | 1993年 / 27卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：287 / 288
页数：2
相关论文
共 50 条
  • [31] LI DOPED ZNSE AND PROBLEMS OF P-TYPE CONDUCTION
    NEUMARK, GF
    HERKO, SP
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 189 - 195
  • [32] Characterization of nitrogen species for P-type doping of ZnSe
    Kimura, K
    Kajiyama, H
    Miwa, S
    Yasuda, T
    Kuo, LH
    Jin, CG
    Tanaka, K
    Yao, T
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 51 - 56
  • [33] CONTACTLESS ELECTRICAL CHARACTERIZATION AND REALIZATION OF P-TYPE ZNSE
    FARRELL, HH
    TAMARGO, MC
    GMITTER, TJ
    WEAVER, AL
    ASPNES, DE
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (02) : 1033 - 1035
  • [34] COMPARISON OF THE P-TYPE DOPANTS K AND N IN ZNSE
    STEWART, H
    SIMPSON, J
    WANG, SY
    HAUKSSON, I
    ADAMS, SJA
    PRIOR, KA
    CAVENETT, BC
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 379 - 382
  • [35] Compensation introduced by defect complexes in p-type ZnSe
    Ren, TL
    Zhu, JL
    Zhu, ZQ
    Yao, T
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (03) : 1439 - 1442
  • [36] ZNSE-BASED LASER-DIODES AND P-TYPE DOPING OF ZNSE
    OHKAWA, K
    TSUJIMURA, A
    HAYASHI, S
    YOSHII, S
    MITSUYU, T
    PHYSICA B, 1993, 185 (1-4): : 112 - 117
  • [37] THEORY OF THE SELF-COMPENSATION IN P-TYPE ZNSE
    KATAYAMAYOSHIDA, H
    SASAKI, T
    OGUCHI, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 625 - 633
  • [38] TI-DOPED P-TYPE LAYER OF ZNSE
    NAKAU, T
    FUJIWARA, T
    YOSHITAKE, S
    TAKENOSHITA, H
    ITOH, N
    OKUDA, M
    JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 196 - 200
  • [39] P-TYPE CONDUCTION IN LI-DOPED ZNSE
    DIELEMAN, J
    APPLIED PHYSICS LETTERS, 1971, 19 (04) : 84 - &
  • [40] OHMIC CONTACTS TO P-TYPE ZNSE USING ZNTE/ZNSE MULTIQUANTUM WELLS
    HIEI, F
    IKEDA, M
    OZAWA, M
    MIYAJIMA, T
    ISHIBASHI, A
    AKIMOTO, K
    ELECTRONICS LETTERS, 1993, 29 (10) : 878 - 879
12345