BAND STRUCTURES OF ALL POLYCRYSTALLINE FORMS OF SILICON DIOXIDE

被引:100
|
作者
LI, YP [1 ]
CHING, WY [1 ]
机构
[1] UNIV MISSOURI,DEPT PHYS,KANSAS CITY,MO 64110
来源
PHYSICAL REVIEW B | 1985年 / 31卷 / 04期
关键词
D O I
10.1103/PhysRevB.31.2172
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:2172 / 2179
页数:8
相关论文
共 50 条
  • [31] STRESS MEASUREMENT BY MICRORAMAN SPECTROSCOPY OF POLYCRYSTALLINE SILICON STRUCTURES
    BENRAKKAD, MS
    BENITEZ, MA
    ESTEVE, J
    LOPEZVILLEGAS, JM
    SAMITIER, J
    MORANTE, JR
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1995, 5 (02) : 132 - 135
  • [32] Modeling of Probabilistic Failure of Polycrystalline Silicon MEMS Structures
    Le, Jia-Liang
    Ballarini, Roberto
    Zhu, Zhiren
    Journal of the American Ceramic Society, 2015,
  • [33] Thermometry of polycrystalline silicon structures using Raman spectrscopy
    Abel, Mark R.
    Graham, Samuel
    Advances in Electronic Packaging 2005, Pts A-C, 2005, : 1695 - 1702
  • [34] Modeling of Probabilistic Failure of Polycrystalline Silicon MEMS Structures
    Le, Jia-Liang
    Ballarini, Roberto
    Zhu, Zhiren
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2015, 98 (06) : 1685 - 1697
  • [35] FUNDAMENTALS OF MEMORY SWITCHING IN VERTICAL POLYCRYSTALLINE SILICON STRUCTURES
    MALHOTRA, V
    MAHAN, JE
    ELLSWORTH, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2441 - 2449
  • [36] Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures
    Tada, H
    Kumpel, AE
    Lathrop, RE
    Slanina, JB
    Nieva, P
    Zavracky, P
    Miaoulis, IN
    Wong, PY
    JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 4189 - 4193
  • [37] INVESTIGATION OF LPCVD POLYCRYSTALLINE SILICON-SILICON DIOXIDE INTERFACE USING SIMS AND AES
    SHARMA, PP
    SHEU, J
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : C329 - C329
  • [38] RING STRUCTURE OF THE CRYSTALLINE AND AMORPHOUS FORMS OF SILICON DIOXIDE
    GUTTMAN, L
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1990, 116 (2-3) : 145 - 147
  • [39] RAPID THERMAL ANNEALING OF THIN SILICON DIOXIDE FILMS IN POLYCRYSTALLINE SILICON-SILICON DIOXIDE-SILICON CAPACITORS (DEFECT GENERATION IN INERT AMBIENTS)
    XIE, Z
    MURARKA, SP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : C265 - C265
  • [40] ION MIGRATION IN METAL-SILICON DIOXIDE SILICON STRUCTURES
    BLAGODAROV, AN
    TARNASHINSKII, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1976, (01): : 105 - 111