EVIDENCE FOR INVERSION LAYER FORMATION AT THE P-GAAS PERSULFATE SOLUTION INTERFACE UNDER STRONG CATHODIC BIAS - ELECTROLUMINESCENCE CAUSED BY CARRIER INJECTION

被引：12

|

作者：

UOSAKI, K

KITA, H

机构：

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1984年 / 88卷 / 19期

关键词：

D O I：

10.1021/j150663a002

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

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页码：4197 / 4199

页数：3

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共 3 条

[1] INVERSION LAYER FORMATION AND ELECTROLUMINESCENCE AT PARA-GAAS/PERSULFATE SOLUTION INTERFACE
UOSAKI, K
KITA, H
[J]. JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 972 - 974
[2] 1ST OBSERVATION OF ELECTROLUMINESCENCE AT THE P-TYPE SEMICONDUCTOR ELECTROLYTE INTERFACE CAUSED BY ELECTRON INJECTION - ENERGETICS OF ADSORBED HYDROGEN AT THE P-GAAS ELECTRODE
UOSAKI, K
KITA, H
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1986, 108 (15) : 4294 - 4298
[3] PHOTOLUMINESCENCE AND IMPEDANCE STUDY OF P-GAAS ELECTROLYTE INTERFACES UNDER CATHODIC BIAS - EVIDENCE FOR FLAT-BAND POTENTIAL SHIFT DURING ILLUMINATION AND INTRODUCTION OF HIGH-DENSITY SURFACE-STATES BY PT TREATMENT
UOSAKI, K
SHIGEMATSU, Y
KANEKO, S
KITA, H
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1989, 93 (17): : 6521 - 6526