INVERSION LAYER FORMATION AND ELECTROLUMINESCENCE AT PARA-GAAS/PERSULFATE SOLUTION INTERFACE

被引：5

|

作者：

UOSAKI, K

KITA, H

机构：

来源：

JOURNAL OF LUMINESCENCE | 1984年 / 31-2卷 / DEC期

关键词：

D O I：

10.1016/0022-2313(84)90177-7

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：972 / 974

页数：3

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[1] EVIDENCE FOR INVERSION LAYER FORMATION AT THE P-GAAS PERSULFATE SOLUTION INTERFACE UNDER STRONG CATHODIC BIAS - ELECTROLUMINESCENCE CAUSED BY CARRIER INJECTION
UOSAKI, K
KITA, H
[J]. JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (19): : 4197 - 4199
[2] DARK NITROUS-OXIDE CATALYTIC CURRENTS AT THE PARA-GAAS/AQUEOUS INTERFACE
SEVEREYN, RB
GALE, RJ
[J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 150 (1-2): : 619 - 627
[3] INVERSION LAYER FORMATION AND SURFACE-STATES AT THE GAAS-ELECTROLYTE INTERFACE
BOSE, DN
SENGUPTA, U
ACHARYA, HN
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (02): : K155 - K157
[4] HOLE INJECTION REACTIONS AND THE POTENTIAL DISTRIBUTION AT THE PARA-GAAS/ELECTROLYTE INTERFACE UNDER ANODIC POLARIZATION
KELLY, JJ
NOTTEN, PHL
[J]. ELECTROCHIMICA ACTA, 1984, 29 (05) : 589 - 596
[5] CRITICAL RE-EVALUATION OF THE PHOTOEMISSION RATE LAW AT THE PARA-GAAS AQUEOUS-ELECTROLYTE INTERFACE
SEVEREYN, RB
GALE, RJ
[J]. MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 1984, 107 (1-2): : 227 - 238
[6] BAND-BENDING AT THE METALLIC CS/PARA-GAAS(110) INTERFACE DETERMINED BY ELECTRIC-FIELD-INDUCED RAMAN-SCATTERING
KONDO, Y
MIZUTANI, G
SAKAMOTO, K
USHIODA, S
[J]. FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A39 - A42
[7] The role of the adsortption layer in the formation of phase inhomogeneity at the InP/GaAs interface
Ivonin I.V.
Subach S.V.
[J]. Russian Physics Journal, 2006, 49 (6) : 580 - 588
[8] Cesiumoxide-GaAs Interface and layer thickness in NEA surface formation
Moré, SD
Tanaka, S
Tanaka, S
Nishitani, T
Nakanishi, T
Kamada, M
[J]. SPIN 2000, 2001, 570 : 916 - 919
[9] KINETICS OF ADSORPTION LAYER FORMATION ON THE SOLUTION-AIR INTERFACE
FAINERMAN, VB
[J]. USPEKHI KHIMII, 1985, 54 (10) : 1613 - 1631
[10] Band bending on GaAs(100): The dipole layer formation on solution passivated surface
Bessolov, VN
Lebedev, MV
Hohenecker, S
Zahn, DRT
[J]. PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 9-10 : 105 - 114