THERMAL ACTIVATION OF PHOTOCONDUCTIVITY OF N-TYPE CDTE

被引:0
|
作者
NIKONYUK, ES
SAVITSKII, AV
PARFENYUK, OA
CHIOKAN, IP
ZAYACHKIVSKII, VP
机构
[1] CHERNOVTSY STATE UNIV,CHERNOVTSY,UKSSR
[2] ACAD SCI UKSSR,SEMICOND INST,KIEV,UKSSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:921 / 922
页数:2
相关论文
共 50 条
  • [41] FREE-CARRIER ABSORPTION IN N-TYPE CDTE
    STRAUSS, AJ
    ISELER, GW
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 326 - &
  • [42] THERMOSTIMULATED CURRENTS IN N-TYPE CDTE SINGLE CRYSTALS
    CUMPELIK, R
    KARGEROVA, J
    KLIER, E
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1969, 19 (08) : 1003 - +
  • [43] CATHODIC ELECTRODEPOSITION OF CDTE ON N-TYPE MONOCRYSTALLINE SILICON
    SUGIMOTO, Y
    PETER, LM
    JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1995, 381 (1-2): : 251 - 255
  • [44] FREE CARRIER ABSORPTION IN N-TYPE CDTE CRYSTALS
    YAMADA, S
    KAWASAKI, Y
    NISHIDA, O
    PHYSICA STATUS SOLIDI, 1968, 26 (01): : 77 - &
  • [45] INFLUENCE OF BACKGROUND ILLUMINATION ON THE SUBMILLIMETER PHOTOCONDUCTIVITY OF N-TYPE INSB
    GERSHENZON, EM
    GRACHEV, SA
    LITVAKGORSKAYA, LB
    FILONOVICH, SR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (02): : 239 - 240
  • [46] The UV photoconductivity of n-type GaN films deposited by MOCVD
    Zhang, DH
    Liu, YY
    Zhang, DJ
    ACTA PHYSICA SINICA, 2001, 50 (09) : 1800 - 1804
  • [48] Yellow luminescence and persistent photoconductivity of undoped n-type GaN
    Chung, SJ
    Cha, OH
    Kim, YS
    Hong, CH
    Lee, HJ
    Jeong, MS
    White, JO
    Suh, EK
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) : 5454 - 5459
  • [49] INVESTIGATION OF THE PHOTOCONDUCTIVITY OF GADOLINIUM-DOPED N-TYPE SILICON
    BAGRAEV, NT
    VLASENKO, LS
    ZHITNIKOV, RA
    IVANOVOMSKII, VI
    LEBEDEV, AA
    MALKOVA, AA
    KARPOV, YA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 212 - 213
  • [50] PHOTOCONDUCTIVITY OF N-TYPE INSB UNDER ELECTRON HEATING CONDITIONS
    GUSEINOV, EK
    NASLEDOV, DN
    POPOV, YG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1076 - &